LT1115CSW [Linear Systems]
Ultralow Noise, Low Distortion, Audio Op Amp; 超低噪声，低失真音频运算放大器
| 型号： | LT1115CSW |
| 厂家： | 
Linear Systems |
| 描述： | Ultralow Noise, Low Distortion, Audio Op Amp |
| 文件： | 总16页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT1115
Ultralow Noise,
Low Distortion, Audio Op Amp
U
FEATURES
DESCRIPTIO
The LT®1115 is the lowest noise audio operational ampli-
fieravailable.Thisultralownoiseperformance(0.9nV/√Hz
at 1kHz) is combined with high slew rates (>15V/µs) and
very low distortion specifications.
■
Voltage Noise: 1.2nV/√Hz Max at 1kHz
0.9nV/√Hz Typ at 1kHz
■
Voltage and Current Noise 100% Tested
■
Gain-Bandwidth Product: 40MHz Min
■
Slew Rate: 10V/µs Min
Voltage Gain: 2 Million Min
The RIAA circuit shown below using the LT1115 has very
low distortion and little deviation from ideal RIAA
response (see graph).
■
■
Low THD at 10kHz, A = –10, R = 600Ω: 0.002%
L
V
V = 7V
RMS
O
■
Low IMD, CCIF Method, AV = +10: 0.002%
, LTC and LT are registered trademarks of Linear Technology Corporation.
RL = 600Ω
V = 7V
O
RMS
U
APPLICATIO S
■
High Quality Audio Preamplifiers
■
Low Noise Microphone Preamplifiers
■
Very Low Noise Instrumentation Amplifiers
■
Low Noise Frequency Synthesizers
■
Infrared Detector Amplifiers
■
Hydrophone Amplifiers
■
Low Distortion Oscillators
U
TYPICAL APPLICATIO
RIAA Phonograph Preamplifier (40/60db Gain)
18V
18V
Measured Deviation from RIAA
+
+
1µF
R
1µF
BOOST
35V
35V
Response. lnput at 1kHz = 1mVRMS
49.9Ω
2
3
2
7
INPUT
+
Pre-Emphasized
4
100Ω
562Ω
A1
LT1115
1
A2
LT1010CT
6
5
OUTPUT
3900pF
R
47.5k (MM)
100Ω (MC)
1.0000
0.80000
0.60000
0.40000
IN
C
IN
(SELECT
PER
PHOTO
CART-
RIDGE)
V
= ±18V
= 25Ω
S
S
–
2N4304*
~250Ω
SELECT
FOR 2mA
R
T
R
4
3
L
°
= 25 C
25k
A
COM
18V
2mA
1µF
1µF
35V
0.20000
0.0
+
+
–18V
35V
–18V
MEASURED
17.8k
210k
499Ω
COMPUTER
SIMULATED
–0.2000
–0.4000
–0.6000
–0.8000
–1.000
+
V
+
+
330pF
22.6Ω
210Ω
470µF
35V
COM
15nF
RESISTORS 1%
*OR USE 2mA CURRENT SOURCE
MM = MOVING MAGNET
MC = MOVING COIL
OPEN—MM
CLOSED—MC
470µF
35V
100
20
1k
FREQUENCY (Hz)
10k
50k
3900pF
SINGLE
POINT
–
LT1115 • TA02
V
–18V
+
82.5k
BOARD
GROUND
NOTE: BYPASS SUPPLIES WITH LOW ESR CAPS
OTHER CAPS: HIGH QUALITY FILM
2200µF
16V
LT1115 • TA01
4.7µF
FILM
1115fa
1
LT1115
W W
U W
ABSOLUTE AXI U RATI GS
(Note 1)
Operating Temperature Range ..................... 0°C to 70°C
Storage Temperature Range ..................–65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
Supply Voltage ...................................................... ±22V
Differential Input Current (Note 5) ...................... ±25mA
Input Voltage ............................ Equal to Supply Voltage
Output Short-Circuit Duration.......................... Indefinite
U
PACKAGE DESCRIPTIO
TOP VIEW
ORDER
ORDER
PART NUMBER
PART NUMBER
NC
NC
1
2
3
4
5
6
7
8
16 NC
TOP VIEW
15
14
13
12
11
10
9
NC
V
OS
V
TRIM
V
OS
LT1115CN8
LT1115CSW
1
2
3
4
8
7
6
5
TRIM
–IN
TRIM
TRIM
–IN
+
–
+
+
–
+
V
OUT
OVER-
COMP
+IN
OUTPUT
OVERCOMP
NC
+IN
–
–
V
V
N PACKAGE
8-LEAD PDIP
NC
NC
NC
T
= 115°C, θ = 130°C/W
JMAX
JA
SW PACKAGE
16-LEAD PLASTIC SO
T
MAX
= 115°C, θ = 130°C/W
JA
LT1115 • POI01
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
VS = ±18V, TA = 25°C, unless otherwise noted.
SYMBOL
THD
IMD
VOS
IOS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
%
Total Harmonic Distortion at 10kHz
Inter-Modulation Distortion (CCIF)
Input Offset Voltage
A = –10, VO = 7VRMS, RL = 600
v
< 0.002
< 0.0002
50
A = 10, VO = 7VRMS, RL = 600
%
v
(Note 2)
VCM = 0V
VCM = 0V
200
200
µV
Input Offset Current
30
nA
IB
Input Bias Current
±50
±380
nA
en
Input Noise Voltage Density
f = 10Hz
o
1.0
0.9
nV/√Hz
nV/√Hz
f = 1000Hz, 100% tested
o
1.2
Wideband Noise
DC to 20kHz
120
nVRMS
dB
Corresponding Voltage Level
re 0.775V
–136
in
Input Noise Current Density
(Note 3)
f = 10Hz
o
4.7
1.2
pA/√Hz
pA/√Hz
f = 1000Hz, 100% tested
o
2.2
Input Resistance
Common Mode
Differential Mode
250
15
MΩ
kΩ
Input Capacitance
5
pF
V
Input Voltage Range
±13.5
±15.0
1115fa
2
LT1115
ELECTRICAL CHARACTERISTICS
VS = ±18V, TA = 25°C, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
CMRR
Common Mode Rejection
Ratio
VCM = ±13.5V
104
123
dB
PSRR
AVOL
Power Supply Rejection
Ratio
VS = ±4V to ±19V
104
126
dB
Large-Signal Voltage Gain
RL ≥ 2kΩ, V = ±14.5V
2.0
1.5
1.0
20
15
10
V/µV
V/µV
V/µV
o
RL ≥ 1kΩ, V = ±13V
o
RL ≥ 600Ω, V = ±10V
o
VOUT
Maximum Output Voltage
Swing
No Load
RL ≥ 2kΩ
RL ≥ 600Ω
±15.5
±14.5
±11.0
±16.5
±15.5
±14.5
V
V
V
SR
Slew Rate
AVCL = –1
10
40
15
70
70
8.5
V/µs
MHz
Ω
GBW
Gain-Bandwidth Product
Open Loop 0utput Impedance
Supply Current
f = 20kHz (Note 4)
o
Z
o
V = 0, I = 0
o o
I
11.5
mA
S
The ■ denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = ±18V, unless otherwise noted.
SYMBOL
VOS
PARAMETER
CONDITIONS
MIN
TYP
75
MAX
UNITS
µV
Input Offset Voltage
Average Input Offset Drift
Input Offset Current
Input Bias Current
Input Voltage Range
(Note 2)
■
280
∆VOS/∆T
IOS
0.5
µV/°C
nA
VCM = 0V
VCM = 0V
■
■
■
■
40
300
IB
±70
±14.8
120
±550
nA
±13
V
CMRR
PSRR
AVOL
Common Mode Rejection
Ratio
VCM = ±13V
100
dB
Power Supply Rejection
Ratio
VS = ±4.5V to ±18V
■
■
100
123
dB
Large-Signal Voltage Gain
RL ≥ 2kΩ, V = ±13V
1.5
1.0
15
10
V/µV
V/µV
o
RL ≥ 1kΩ, V = ±11V
o
VOUT
Maximum Output Voltage
Swing
No Load
RL ≥ 2kΩ
RL ≥ 600Ω
±15
±13.8
±10
±16.3
±15.3
±14.3
V
V
V
■
■
I
Supply Current
9.3
13
mA
S
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 4: Gain-bandwidth product is not tested. It is guaranteed by design
and by inference from the slew rate measurement.
Note 2: Input Offset Voltage measurements are performed by automatic
test equipment approximately 0.5 sec after application of power.
Note 3: Current noise is defined and measured with balanced source
resistors. The resultant voltage noise (after subtracting the resistor noise
on an RMS basis) is divided by the sum of the two source resistors to
obtain current noise.
Note 5: The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds ±1.8V, the input current should be limited to 25mA.
1115fa
3
LT1115
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Wideband Voltage Noise
Total Noise vs Matched Source
Resistance
Wideband Noise, DC to 20kHz
(0.1Hz to Frequency Indicated)
10
100
10
V
= ±18V
S
R
S
°
T
= 25 C
A
–
R
S
+
1
AT 1kHz
2 R NOISE ONLY
AT 10Hz
S
0.1
1.0
0.1
V
= ±18V
°
= 25 C
S
A
0.5ms/DIV
T
0.01
100
1k
100k
10k
BANDWIDTH (Hz)
1M
10M
3
MATCHED SOURCE RESISTANCE, R (Ω)
1
10 30
100 300 1k 3k 10k
S
LT1115 • TPC02
LT1115 • TPC03
THD + Noise vs Frequency
(AV = –10)
THD + Noise vs Frequency
(AV = –100)
THD + Noise vs Frequency
(AV = –1000)
0.1
0.1
0.010
0.001
0.010
AV = –1000
A
= –100
= 600
A
= –10
= 600
V
L
V
L
R
V
= 600
R
V
R
V
L
= 20mV (7mV
= 200mV (70mV
= 2V (700mV
IN
P-P RMS)
IN
OUT
P-P
RMS)
IN
OUT
A
V
P-P
RMS)
V
T
= 20V (7V
RMS)
V
T
= 20V (7V
RMS)
OUT
A
V
P-P
V
= 20V (7V
RMS)
P-P
P-P
°
°
= 25 C
= 25 C
°
T
= 25 C
A
= ±18V
V
= ±18V
S
S
= ±18V
S
0.010
0.001
0.001
0.0005
100
1k
FREQUENCY (Hz)
20k
20
20
100
1k
FREQUENCY (Hz)
20k
20k
20
100
1k
FREQUENCY (Hz)
LT1115 • TPC06
LT1115 • TPC05
LT1115 • TPC04
THD + Noise vs Frequency
(AV = 100)
THD + Noise vs Frequency
(AV = 10)
THD + Noise vs Frequency
(AV = 1000)
0.010
0.1
0.010
0.001
0.1
A
V
V
T
= 100
A
= 10
A
V
V
T
= 1000
V
V
L
V
= 200mV (700V
R
V
= 600
= 20mV (7mV
IN
P-P
RMS)
IN
OUT
= 25 C
= 600
P-P
RMS)
= 20mV (7V
RMS)
= 20V (7V
RMS)
= 2V (700mV
OUT
P-P
P-P
IN
OUT
A
V
P-P
RMS)
°
= 25 C
= 600
L
°
V
T
= 20V (7V
RMS)
A
A
L
P-P
R
V
°
R
V
= 25 C
= ±18V
S
= ±18V
= ±18V
S
S
0.010
0.001
0.001
0.0005
0.0005
20
20k
100
1k
FREQUENCY (Hz)
20
1k
FREQUENCY (Hz)
100
20k
20k
100
1k
FREQUENCY (Hz)
20
LT1115 • TPC08
LT1115 • TPC09
LT1115 • TPC07
1115fa
4
LT1115
U W
TYPICAL PERFOR A CE CHARACTERISTICS
CCIF IMD Test (Twin Equal
CCIF IMD Test (Twin Equal
Slew Rate, Gain-Bandwidth-Product
vs Overcompensation Capacitor
10000
Amplitude Tones at 13 and 14kHz)*
Amplitude Tones at 13 and 14kHz)*
0.1
0.010
0.001
0.0001
100
10
0.1
0.010
A
= 10
A
= 10
V
L
V
L
R
T
= 600
R
T
= 10k
°
°
= 25 C
= 25 C
A
A
V
= ±18V
V
= ±18V
S
S
1000
GWB
SLEW
100
1
0.001
C
V
FROM PIN 5 TO PIN 6
OC
S
A
= ±18V
°
T
= 25 C
10
10000
0.0001
0.1
1000
OVERCOMPENSATION CAPACITOR (pF)
1
10
100
10m
1
10
0.1
0.1
OUTPUT AMPLITUDE (V
10m
1
10
)
OUTPUT AMPLITUDE (V
)
RMS
RMS
LT1115 • TPC10
LT1115 • TPC11
LT1115 • TPC12
Total Noise vs Unmatched Source
Resistance
Current Noise Spectrum
Voltage Noise vs Temperature
100
10
1
2.0
100
10
R
S
V
= ±18V
S
1.6
1.2
0.8
0.4
AT 10Hz
AT 1kHz
AT 1kHz
AT 10Hz
TYPICAL
R
NOISE ONLY
S
1.0
0.1
1/f CORNER = 250Hz
V
= ±18V
°
= 25 C
S
A
T
0.1
0
1
10
1k
100
FREQUENCY (Hz)
10k
3
10 30
UNMATCHED SOURCE RESISTANCE, R (Ω)
100 300 1k 3k 10k
15
30
TEMPERATURE (°C)
45
60
75
0
S
LT1115 • TPC14
LT1115 • TPC15
LT1115 • TPC13
Output Short-Circuit Current
vs Time
Voltage Noise vs Supply Voltage
Supply Current vs Temperature
1.5
1.25
1.0
10
9
50
40
V
= ±18V
T
= 25°C
S
A
V
= ±18V
= ±15V
S
25°C
V
30
20
10
0
8
7
S
V
= ±5V
S
6
5
4
–10
– 20
–30
–40
–50
AT 1kHz
3
2
1
0.75
0.5
25°C
0
0
15
30
TEMPERATURE (°C)
60
45
75
2
3
0
1
±10
±15
0
±20
±5
TIME FROM OUTPUT SHORT TO GROUND (MINUTES)
SUPPLY VOLTAGE (V)
LT1115 • TPC17
LT1115 • TPC16
LT1115 • TPC18
*See CCIF Test Note at end of “Typical Performance Characteristics”.
1115fa
5
LT1115
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Voltage Gain vs Frequency
Gain, Phase vs Frequency
Voltage Gain vs Supply Voltage
70
60
50
70
60
50
40
30
20
10
160
140
120
100
T
= 25°C
A
PHASE
R
= 2kΩ
L
100
80
R
= 600Ω
40
30
L
10
60
GAIN
20
40
10
20
0
V
T
= ±18V
V
T
= ±18V
S
S
°
0
°
= 25 C
0
= 25 C
A
A
C
= 10pF
R
= 2k
L
L
– 10
100M
–10
1
–20
100k
1M
10M
10k
1
10 100
0.01
10k
100M
100k 1M 10M
0.1
1k
FREQUENCY (Hz)
±10
SUPPLY VOLTAGE (V)
±15
0
± 20
±5
FREQUENCY (Hz)
LT1115 • TPC19
LT1115 • TPC20
LT1115 • TPC21
Common Mode Limit Over
Temperature
Voltage Gain vs Load Resistance
Capacitance Load Handling
+
80
V
100
10
1
V
T
= ±18V
S
–1
–2
–3
–4
°
= 25 C
70
A
30pF
I
= 27mA AT 25°C
LMAX
V
V
= ±5V
S
R
S
2k
C
60
50
+
–
= ±18V
S
L
40
30
20
10
0
A
= –1, R = 2k
S
V
+4
A
= –10
= 200Ω
V
S
R
+3
+2
V
= ±5V TO ±18V
S
A
= –100
= 20Ω
V
S
R
V
= ±18V
S
A
+1
°
T
= 25 C
–
V
10
30
45
0.1
0
15
60
1
100
1000
(pF)
75
10
10000
TEMPERATURE (°C)
CAPACITIVE LOAD,
C
LOAD RESISTANCE (kΩ)
L
LT1115 • TPC23
LT1115 • TPC22
LT1115 • TPC24
Common Mode Rejection Ratio
vs Frequency
Power Supply Rejection Ratio
vs Frequency
Large-Signal Transient Response
140
160
140
120
100
80
120
100
80
NEGATIVE
SUPPLY
POSITIVE
SUPPLY
60
60
40
40
20
0
1µs/DIVISION
20
0
V
= ±18V
V
= ±18V
S
A
S
A
AV = –1
°
°
T
= 25 C
T
= 25 C
R
S = Rf = 2k
Cf = 30pF
0.1
1
10 100 1k 10k 100k 1M 10M
10
100
1k
10k
100k
10M
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
LT1115 • TPC25
LT1115 • TPC26
1115fa
6
LT1115
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Maximum Output vs Frequency
(Power Bandwidth*)
Closed-Loop Output Impedance
Small-Signal Transient Response
30
25
20
15
10
5
100
10
I
V
T
= 1mA
V
T
= ±18V
O
S
A
S
°
= ±18V
= 25 C
A
°
= 25 C
R
= 2kΩ
L
1
A
V
= 1000
0.1
*POWER BANDWIDTH
SLEW RATE
A
= 5
V
f
=
P
πE
OP
= POWER BANDWIDTH
0.01
0.001
f
E
P
0.2µs/DIVISION
=
PEAK-TO-PEAK AMPLIFIER
OUTPUT VOLTAGE
-
P P
AV = –1,
0
10k
RS = Rf = 2kΩ
Cf = 30pF
10
100
1k
10k
100k
1M
100k
FREQUENCY (Hz)
1M
10M
FREQUENCY (Hz)
LT1115 • TPC29
C
L = 80pF
LT1115 • TPC30
CCIF Testing
Note: The CCIF twin-tone intermodulation test inputs two closely
spaced equal amplitude tones to the device under test (DUT). The
analyzer then measures the intermodulation distortion (IMD)
produced in the DUT by measuring the difference tone equal to the
spacing between the tones.
FPO
The amplitude of the lMD test input is in sinewave peak equivalent
terms. As an example, selecting an amplitude of 1.000V will result in
the complex IMD signal having the same 2.828V peak-to-peak
amplitude that a 1.000V sinewave has. Clipping in a DUT will thus
occur at the same input amplitude for THD + N and IMD modes.
W U U
U
APPLICATIO S I FOR ATIO
The LT1115 is a very high performance op amp, but
not necessarily one which is optimized for universal
application. Because of very low voltage noise and the
resulting high gain-bandwidth product, the device is most
applicable to relatively high gain applications. Thus, while
the LT1115 will provide notably superior performance to
the 5534 in most applications, the device may require
circuit modifications to be used at very low noise gains.
Thepartisnotgenerallyapplicableforunitygainfollowers
orinverters.Ingeneral,itshouldalwaysbeusedwithgood
low impedance bypass capacitors on the supplies, low
impedance feedback values, and minimal capacitive load-
ing. Ground plane construction is recommended, as is a
compact layout.
Voltage Noise vs Current Noise
The LT1115’s less than 1nV/√Hz voltage noise matches
that of theLT1028 andisthreetimesbetterthanthelowest
voltage noise heretofore available (on the LT1007/1037).
A necessary condition for such low voltage noise is
operating the input transistors at nearly 1mA of
collector currents, because voltage noise is inversely
proportional to the square root of the collector current.
Current noise, however, is directly proportional to the
square root of the collector current. Consequently, the
LT1115’s current noise is significantly higher than on
most monolithic op amps.
1115fa
7
LT1115
W U U
U
APPLICATIO S I FOR ATIO
Therefore, to realize truly low noise performance it is
important to understand the interaction between voltage
The plot also shows that current noise is more dominant
at low frequencies, such as 10Hz. This is because resistor
noise is flat with frequency, while the 1/f corner of current
noise (e ), current noise (i ) and resistor noise (r ).
n
n
n
noise is typically at 250Hz. At 10Hz when R > 1kΩ, the
eq
Total Noise vs Source Resistance
The total input referred noise of an op amp is given by
current noise term will exceed the resistor noise.
When the source resistance is unmatched, the Total Noise
vs Unmatched Source Resistance plot should be con-
sulted. Note that total noise is lower at source resistances
below 1kΩ because the resistor noise contribution is less.
2
2
2 1/2
e = [e + r + (i R ) ]
t
n
n
n eq
where R is the total equivalent source resistance at
eq
When R > 1kΩ total noise is not improved, however. This
s
the two inputs
is because bias current cancellation is used to reduce
input bias current. The cancellation circuitry injects two
correlated current noise components into the two inputs.
With matched source resistors the injected current noise
creates a common-mode voltage noise and gets rejected
by the amplifier. With source resistance in one input only,
the cancellation noise is added to the amplifier’s inherent
noise.
and r = √4kTR = 0.13√R in nV/√Hz at 25°C
n
eq
eq
As a numerical example, consider the total noise at 1kHz
of the gain of 1000 amplifier shown below.
100k
100Ω
–
+
LT1115
100Ω
In summary, the LT1115 is the optimum amplifier for
noise performance—provided that the source resistance
is kept low. The following table depicts which op amp
manufactured by Linear Technology should be used to
minimize noise—as the source resistance is increased
beyond the LT1115’s level of usefulness.
LT1115 • AI01
R
eq
= 100Ω + 100Ω||100k ≈ 200Ω
r = 0.13√200 = 1.84nV/√Hz
n
e = 0.85nV/√Hz
n
Best Op Amp for Lowest Total Noise vs Source Resistance
i = 1.0pA/√Hz
SOURCE RESISTANCE
(NOTE 1)
BEST OP AMP
n
AT LOW FREQ (10Hz)
WIDEBAND (1kHz)
2
2
2 1/2
e = [0.85 + 1.84 + (1.0 x 2.0) ]
= 2.04nV/√Hz
t
0 to 400Ω
400Ω to 4kΩ
4kΩ to 40kΩ
40kΩ to 500kΩ
500kΩ to 5MΩ
> 5M
LT1028/1115
LT1007/1037
LT1001*
LT1028/1115
LT1028/1115
LT1007/1037
LT1001*
LT1012*
LT1055
output noise = 1000 e = 2.04µV/√Hz
t
LT1012*
LT1012* or LT1055
LT1055
At very low source resistance (Req < 40Ω) voltage noise
dominates.AsR isincreasedresistornoisebecomesthe
eq
largestterm—asintheexampleabove—andtheLT1115’s
Note 1: Source resistance is defined as matched or unmatched, e.g.,
RS = 1kΩ means: 1kΩ at each input, or 1kΩ at one input and zero at the
other.
*These op amps are best utilized in applications requiring less bandwidth
than audio.
voltage noise becomes negligible. As R is further
eq
increased, current noise becomes important. At 1kHz,
when R is in excess of 20kΩ, the current noise
eq
component is larger than the resistor noise. The Total
Noise vs Matched Source Resistance plot in the Typical
Performance Characteristics section, illustrates the above
calculations.
1115fa
8
LT1115
U
TYPICAL APPLICATIO S
R1
1k, 0.1%
R3
316k, 0.1%
18V
7
+
1µF 35V
4.7µF
FILM
LOW ESR
2
3
100
1%
–
R
30k
1%
P
6
INPUT
LT1115
OUT
+
4
10k
1%
1µF 35V
+
LOW ESR
–18V
NOTE: MATCH RESISTOR PAIRS
R3
R4
R1
R2
=
R2
1k, 0.1%
R4
TO ±0.1%
316k, 0.1%
LT1115 • TA03
Figure 1. Balanced Transformerless Microphone Preamp
THD + Noise vs Frequency
(Figure 1)
1
°
T
= 25 C
A
L
R
= 100kΩ
V
V
R
= 10mV
IN
OUT
RMS
RMS
= 2.92V
= 150Ω
S
0.1
0.010
20
100
1k
FREQUENCY (Hz)
20k
LT1115 • TA04
1115fa
9
LT1115
U
TYPICAL APPLICATIO S
18V
18V
49.9Ω
+
+
R
1µF
35V
BOOST
1µF
35V
3
2
7
INPUT
+
–
+
V
R
L
OUTPUT
100Ω
6
R1
100Ω
LT1010CT
LT1115
C1
IN
8
33pF
–
1
4
2N4304*
2mA
V
RESISTORS 1% METAL FILM
CAPACITORS – BYPASS; LOWER ESR
OTHER: POLYESTER OR OTHER
HIGH QUALITY FILM.
R2
909Ω
–18V
1µF
*OR USE 2mA CURRENT SOURCE.
35V
1µF
35V
~250Ω
+
–18V
+
SELECT
FOR 2mA
33.2k
1%
33.2k
1%
100k
18V
7
+
1µF
35V
1µF
2
–
6
LT1097
4
3
+
100k
1µF
+
35V
1µF
OPTIONAL SERVO LOOP
LOWERS OFFSET TO < 50µV
–18V
LT1115 • TA05
NOTE 1: USE SINGLE POINT GROUND.
NOTE 3: FOR BETTER NOISE PERFORMANCE AT
SLIGHTLY LESS DRIVE CAPABILITY: R1 = 43Ω,
R2 = 392Ω DELETE C1.
NOTE 2: USE ≥ 470µF CAPACITORS AT EACH
INCOMING SUPPLY TERMINAL (I.E. AT BOARD EDGE).
Figure 2. Low Noise DC Accurate x 10 Buffered Line Amplifier
THD + Noise vs Frequency
(Figure 2)
0.010
°
T
= 25 C
A
S
V
V
V
= ±18V
= 500mV
IN
OUT
RMS
RMS
= 5V
R
R
= 10Ω
S
L
= 600Ω
0.001
0.0001
20
100
20k
1k
FREQUENCY (Hz)
LT1115 • TA07
1115fa
10
LT1115
U
TYPICAL APPLICATIO S
100pF
2.49k
GAIN: 40dB
30dB
24.9Ω
75Ω
475Ω
OUTPUT
TO
RIAA
18V
STAGE
0.01µF
100Ω
+
1µF
1M
–
2
3
7
4
35V
6
6
LT1115
+
INPUT
7
3
+
1µF
100V
LT1097
4
100µF
1M
100k
2
+
35V
18V
–
1µF
100V
18V
–18V
100µF
–18V
RESISTORS 1% METAL FILM
CAPACITORS—BYPASS: LOW ESR
OTHER: HIGH QUALITY FILM
+
35V
1µF
+
35V
– 18V
NOTE 1: USE SINGLE POINT
GROUNDING TECHNIQUES
LT1115 • TA06
Figure 3. RIAA Moving Coil “Pre-Pre” Amplifier
(40/30dB Gain Low Noise Servo’d Amplifier)
CCIF IMD Test (Twin Tones at 13
and 14kHz) (Figure 3)
Noise vs Frequency (Figure 3)
0.1
10µ
°
°
T
= 25 C
T
= 25 C
= ±18V
= 100k
A
S
A
V
= ±18V
V
S
INPUT GROUNDED
R
L
0.010
0.001
1µ
100n
10n
0.0001
1
20k
10
20
100
1k
FREQUENCY (Hz)
0.1
OUTPUT AMPLITUDE (
V
)
RMS
LT1115 • TA08
NOTE: NOISE AT 1kHz REFERRED TO INPUT ~2nV
LT1115 • TA09
1115fa
11
LT1115
U
TYPICAL APPLICATIO S
18V
+
+
1µF
35V
470µF
35V
100pF
2.49k
RIAA NETWORK
+
35V
1µF
12.1Ω
2
7
R1
6081Ω
–
3
2
6
7
+
–
LT1115
4.7µF FILM
499Ω
3
MOVING COIL
INPUT
6
+
OUTPUT
100k
LT1056
4
4
C1
0.1645µF
R2
490Ω
1µF
100Ω
0.01µF
+
35V
10k
1µF
C2
0.483µF
499Ω
+
35V
RESISTORS 1% METAL FILM
CAPACITORS—BYPASS: LOW ESR
OTHER: HIGH QUALITY FILM
–18V
NOTE 1: 1kHz GAIN = 53dB
470µF
NOTE 2: IN RIAA NETWORK VALUES SHOWN
ARE MEASURED AND PRODUCE THE
“DEVIATION FROM RIAA” GRAPH SHOWN.
THE CALCULATED EXACT VALUES ARE:
R1-6249Ω C1-0.161µF
+
35V
LT1115 • TA10
R2-504Ω C2-0.47µF
Figure 4. Moving Coil Passive RIAA Phonograph Pre-Amp
Deviation from RIAA Response
Input at 1kHz = 232µVRMS
Pre-Emphasized (Figure 4)
THD + Noise vs Frequency
Input at 1kHz = 232µVRMS
Pre-Emphasized (Figure 4)
0.1
0.010
0.001
0.50000
0.40000
0.30000
0.20000
0.10000
V
= ±18V
= 100k
= 10Ω
= 25°C
S
L
S
V
= ±18V
= 100k
= 10Ω
S
R
R
T
R
R
L
S
A
°
A
T
= 25 C
0.0
–0.1000
–0.2000
–0.3000
–0.4000
–0.5000
100
20
1k
20k
1k
100
FREQUENCY (Hz)
20
20k
FREQUENCY (Hz)
LT1115 • TA11
LT1115 • TA12
1115fa
12
LT1115
U
TYPICAL APPLICATIO S
470µF
35V
+
18V
2.5k
REV. AUDIO
TAPER
+
+
1µF
35V
1µF
35V
49.9Ω
1N4002
100pF
22Ω
4.99Ω
100Ω
+
OPTIONAL
SINGLE-ENDED TO
BALANCED OUTPUT
TRANSFORMER
V
2
3
7
2.49k
–
BOOST
100Ω
10Ω
IN
6
LT1010CT
LT1115
4
RED
YELLOW
BRN
OUT
+
–
2N4304**
V
RED
YEL
150Ω
MICROPHONE
INPUT
~250Ω
SELECT
FOR 2mA
6.19k
2mA
BRN
ORANGE
JENSEN
JE-11-BM
BLK
WHT
1µF
470µF
1µF
+
35V
+
35V
35V
RESISTORS 1% METAL FILM
+
CASE
CAPACITORS—BYPASS: LOW ESR
OTHER: HIGH QUALITY FILM
1N4002
–18V
JENSEN
JE-16-A/B
NOTE: USE SINGLE POINT GROUND
18V
7
*JENSEN NETWORK VALUES—FACTORY SELECTED.
+
1µF
1µF
JE-16-A/B & JE-11-BM AVAILABLE FROM:
JENSEN TRANSFORMERS
10735 BURBANK BLVD.
35V
100k
–
+
2
10k
N. HOLLYWOOD, CA 91601
(213) 876-0059
OR USE 2mA CURRENT SOURCE
6
LT1097
4
3
**
LT1115 • TA13
10Ω
1µF
35V
100k
1µF
+
–18V
Figure 5. High Performance Transformer Coupled Microphone Pre-Amp
Risetime of High Performance
Transformer Coupled Microphone
Pre-Amp (Figure 5)
THD + Noise vs Frequency
(Gain = 20dB) Balanced In/
Balanced Out (Figure 5)
Frequency Response
(Gain = 20dB) Balanced In/
Balanced Out (Figure 5)
1.0000
1
0.1
V
V
= ±18V
= 0.95V
= 600Ω
= 150Ω
S
IN
RMS
R
R
0.0
–1.000
– 2.000
L
S
A
°
T
= 25 C
0.010
– 3.000
– 4.000
– 5.000
V
V
= ±18V
= 0.95V
= 600Ω
= 150Ω
S
IN
RMS
R
R
L
S
A
RISETIME OF PRE-AMP
0.001
°
T
= 25 C
A
V = 20dB
0.0005
VIN = 400mV
10
100
10k
1k
FREQUENCY (Hz)
100k
20
100
1k
FREQUENCY (Hz)
20k
2kHz SQUARE WAVE MEASURED AT SINGLE-
ENDED OUTPUT BEFORE TRANSFORMER
LT1115 • TA16
LT1115 • TA15
1115fa
13
LT1115
U
TYPICAL APPLICATIO S
R1
C1
0.1µF FILM
2k
200Ω
15V
C2
0.1µF
FILM
1µF
35V
15V
2
R
= 49.9Ω
BOOST
+
1µF
35V
+
7
3
2
+
–
4
5
100Ω
2k
200Ω
IN
1
20V OUTPUT
LT1010
3
LT1115
4
P-P
R2
15V
+
1µF
7
+
1µF
1µF
35V
35V
–
2
+
35V
–15V
–15V
6
5.6k
LT1022
+
3
2.4k
500Ω
(20T)
4.7k
10pF
4
–15V
15V
+
MOUNT,
470µF
1µF
35V
10µF
1N4148's
IN CLOSE
PROXIMITY
35V
2.5V
+
–15V
1k
LT1004's
1.2V
1
120k
1µF
f =
–15V
2πRC
470µF
WHERE R1C1 = R2C2
MEASURED WITH
R1 = R2 = 1.5k
+
35V
10k
10k
<5ppm DISTORTION AND NOISE
VACTEC
VTL 5C10
15V
+
AT 1kHz, 20V INTO 100Ω
1µF
35V
P-P
7
MEASUREMENT LIMITED BY RESOLUTION
OF AUDIO PRECISION TEST SYSTEM
–
100Ω
LT1006
ALL BYPASS CAPACITORS: LOW ESR
FILM CAPACITORS = ASC TYPE 315
+
4
LT1115 • TA17
Figure 6. Ultralow THD Oscillator (Sine Wave) (< 5ppm Distortion)
1115fa
14
LT1115
U
PACKAGE DESCRIPTIO
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
.400*
(10.160)
MAX
8
7
6
5
4
.255 ± .015*
(6.477 ± 0.381)
1
2
3
.130 ± .005
.300 – .325
.045 – .065
(3.302 ± 0.127)
(1.143 – 1.651)
(7.620 – 8.255)
.065
(1.651)
TYP
.008 – .015
(0.203 – 0.381)
.120
.020
(0.508)
MIN
(3.048)
MIN
+.035
.325
–.015
.018 ± .003
(0.457 ± 0.076)
.100
(2.54)
BSC
+0.889
8.255
(
)
N8 1002
–0.381
NOTE:
INCHES
1. DIMENSIONS ARE
MILLIMETERS
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)
1115fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LT1115
U
PACKAGE DESCRIPTIO
SW Package
16-Lead Plastic Small Outline (Wide .300 Inch)
(Reference LTC DWG # 05-08-1620)
.050 BSC .045 ±.005
.030 ±.005
.398 – .413
(10.109 – 10.490)
NOTE 4
TYP
15 14
12
10
9
N
16
N
13
11
.325 ±.005
.420
MIN
.394 – .419
(10.007 – 10.643)
NOTE 3
N/2
8
1
2
3
N/2
RECOMMENDED SOLDER PAD LAYOUT
2
3
5
7
1
4
6
.291 – .299
(7.391 – 7.595)
NOTE 4
.037 – .045
(0.940 – 1.143)
.093 – .104
(2.362 – 2.642)
.010 – .029
× 45°
(0.254 – 0.737)
.005
(0.127)
RAD MIN
0° – 8° TYP
.050
(1.270)
BSC
.004 – .012
.009 – .013
(0.102 – 0.305)
NOTE 3
(0.229 – 0.330)
.014 – .019
.016 – .050
(0.356 – 0.482)
TYP
(0.406 – 1.270)
NOTE:
1. DIMENSIONS IN
INCHES
(MILLIMETERS)
S16 (WIDE) 0502
2. DRAWING NOT TO SCALE
3. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS.
THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS
4. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
1115fa
LW/TP 1102 1K REV A • PRINTED IN USA
16 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
■
■
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 1989
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